Abstract
The role of diffusion in determining the condition for step flow growth is discussed. The steady-state, non-equilibrium adatom concentration during step flow is derived for the case that steps are imperfect, asymmetric sinks. Asymmetry caused by a step edge diffusion barrier is considered explicitly. This result can be used to calculate the critical terrace width for step flow growth. Experimental results obtained with low energy electron microscopy reveal an Arrhenius behaviour of the critical terrace width for Si/Si(111) (7×7) step flow growth. In the homogenous nucleation regime, the temperature dependence of the critical terrace width on Si(111) (7×7) is dominated by the diffusion energy.
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Altman, M.S. (1997). The Role of Diffusion in Step Flow Growth. In: Tringides, M.C. (eds) Surface Diffusion. NATO ASI Series, vol 360. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-0262-7_20
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DOI: https://doi.org/10.1007/978-1-4899-0262-7_20
Publisher Name: Springer, Boston, MA
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