Precursors for the Chemical Vapor Deposition of Titanium Disulfide and Titanium Nitride Films

  • Charles H. Winter

Abstract

The rational design of precursors to binary inorganic materials is enhanced by a detailed understanding of the path that leads to the final product. Chemical Vapor Deposition (CVD), in which gas phase species react to form a film on a surface, has evolved into a very attractive method to prepare thin films of early transition metal chalcogenides, pnictogenides, and carbides.1 Despite the wide use of CVD to fabricate thin films, very little is known about the chemical reactions that are involved in these processes. Recently, we initiated a research program with the goal of understanding ligand intermediates in CVD processes to the above mentioned materials.2 A significant goal was to assess the possible intermediacy of metalligand multiple bonded compounds in CVD processes, since such species have been widely proposed in film deposition mechanisms.3 Herein we describe our recent efforts to prepare precursors to titanium disulfide and titanium nitride films using CVD techniques.

Keywords

Chemical Vapor Deposition Titanium Nitride Chemical Vapor Deposition Process Titanium Tetrachloride Chemical Vapor Deposition Reactor 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media New York 1997

Authors and Affiliations

  • Charles H. Winter
    • 1
  1. 1.Department of ChemistryWayne State UniversityDetroitUSA

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