Abstract
As lithographic dimensions progress through sub-micron sizes, the effect of contamination becomes more severe. The occurance of small particulates rises rapidly as their size decreases, not only because of the larger number of small airborne particulates but also because of the particulates from tools and semiconductor materials. Even with better clean rooms, this larger defect density can cause drastic yield reductions unless specific measures are taken to reduce its impact.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
J. Warlaumont, X-Ray Lithography: on the Path to Manufacturing, J.Vac.Sci.Technol.B, to be published.
R. Viswanathan, R.E. Acosta, D. Seeger, H. Voelker, A. Wilson, I. Babich, J. Maldonado, J. Warlaumont, O. Vladimirsky, F. Hohn, Fully Scaled 0.5 μm Metal-oxide Semiconductor Circuits By Synchrotron X-ray Lithography: Mask Fabrication and Characterization, J.Vac.Sci.Technol.B, 6(6) 2196 (1988).
G. Wardly, R. Feder, D. Hofer, E. Castellani, R. Scott, J. Topalian, Circuits Manufacturing, 18(1), 30 (1978).
H. Oertel, H. Betz, A. Heuberger, Application of the Simulator “XMAS” on Specific Problems in Sub-half-micron Lithography, Microelectronic Engineering 3, 387 (1985).
A. Kluwe, K.H. Müller, H. Betz, H. Oertel, Defects in X-ray Masks: Detection and Printabrlity, J.Vac.Sci.Tech.B, 5(1), 262, (1987).
R.A. DellaGuardia, D.E. Seeger, J.L. Mauer, X-ray Transmission Through Low Atomic Number Particles, Microelectronics Engineering 9, 139 (1988).
A.V. Ferris-Prabhu, Role of Defect Size Distribution in Yield Modeling, IEEE Trans.Elec.Dev., ED-32(9), 1727, (1985).
C.H. Stapper, Modeling of Integrated Circuit Defect Sensitivities, IBM J. Res. Develop., 27(6), 549, (1983).
C.H. Stapper, F.M. Armstrong, K. Saji, Integrated Circuit Yield Statistics, Proc.IEEE, 71(4), 453, (1983).
C.H. Stapper, P.P. Castrucci, R.A. Maeder, W.E. Rowe, R.A. Verheist, Evolution and Accomplishments of VLSI Yield Management, IBM J.Res.Develop., 26(5), 532, (1982).
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1990 Springer Science+Business Media New York
About this chapter
Cite this chapter
Mauer, J., Seeger, D., DellaGuardia, R. (1990). Yield Improvement Through X-RAY Lithography. In: Stapper, C.H., Jain, V.K., Saucier, G. (eds) Defect and Fault Tolerance in VLSI Systems. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-9957-6_17
Download citation
DOI: https://doi.org/10.1007/978-1-4757-9957-6_17
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4757-9959-0
Online ISBN: 978-1-4757-9957-6
eBook Packages: Springer Book Archive