Abstract
We study a model based on the double exchange mechanism and diagonal disorder to calculate magnetization and conductivity for La1−x Sr x MnO3 type crystals as a function of temperature. The model represents each Mn4+ ion by a spin
, on which an electron can be added to produce Mn3+. We include a hopping energy t, and a strong intra-atomic exchange interaction J. To represent in a simple way the effects of disorder we assume a Lorentzian distribution of diagonal energies of width F at the Mn sites. We calculate the mobility edge and the Fermi level as functions of magnetization. We add the spin entropy to build up the free energy of the system. In the strong coupling limit, J ≫ t, Γ, the model results can be expressed in terms of t and F only. We use the results of the model to draw “phase diagrams” that separate ferromagnetic from paramagnetic states and also “insulating” states where the Fermi level falls in a region of localized states from “metallic” where the Fermi level falls in a region of extended states. We then add the contributions to the conductivity of extended states to those of localized states to calculate the resistivity for different concentrations and the magnetoresistance. We conclude that the model can be used successfully to represent the transport properties of the systems under consideration.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
R. von Helmholt, et al., Phys. Rev. Lett. 71, 2331 (1993).
G. H. Jonker and J. H. van Santen, Physica 16, 337 (1950); J. H. van Santen and G. H. Jonker, Physica 16, 599 (1950).
C. Zener, Phys. Rev. 82, 403 (1951).
4. P. W. Anderson and H. HasegawaPhys. Rev. 100, 675 (1955).
P. G. de Gennes, Phys. Rev. 118, 141 (1960).
K. Kubo and N. Ohata, J. Phys. Soc. Jpn. 33, 21 (1972).
J. Mazzaferro, C. A. Balseiro, and B. Alascio, J. Phys. Chem. Solids 46, 1339 (1985).
Y. Okimoto et al., Phys. Rev. Lett. 75, 109 (1995); S. W. Clieong et al. Proceedings of the Physical Phenomena at High Magnetic Fields-II Conference, Tallahassee, Florida. World Scientific, to be published; M. C. Martin et al.,to be published; R. Mahendiran, R. Mahesh, A. K. Raichaudlniri, and C. N. R. Rao, Solid State Commun. 94 515 (1995); H. L. Ju et al., Phys. Rev. B 51 6143 (1995); M. K. Gubkin et al., JETP Lett. 60 57 (1994).
N. Furukawa, J. Phys. Soc. Jpn. 63, 3214 (1994).
A. J. Millis, P. B. Littlewood, and B. I. Shrainman, Phys. Rev. Lett. 74, 5144 (1995).
R. Allub and B. Alascio, Solid State Commun. 99, 613 (1996).
E. Müller-Hartmann and E. Dagotto, to appear in Phys. Rev. B,preprint condmat/9605041.
Y. Tokura et al., J. Phys. Soc. Jpn. 63 3931 (1994).
Y. Moritomo, A. Asamitsu, and Y. Tokura, Phys. Rev. B 51, 16491 (1995).
See, e.g.,E. N. Economou, Green’s Functions in Quantum Physics,edited by P. Fulde, Springer Series in Solid State Sciences (Springer-Verlag, Berlin), Vol. 7.
P. W. Anderson, Phys. Rev. 109, 1492 (1958).
D. C. Licciardello and E. N. Economou, Phys. Rev. 11, 3697 (1975).
P. Lloyd, J. Phys. C 2, 1717 (1969).
J. M. Ziman, J. Phys. C 2, 1230 (1969).
A. A. Aligia Ph.D. Thesis, Instituto Balseiro, 1984.
N. F. Mott and E. A. Davies, Electronic Processes in Non-Crystalline Materials (Oxford University Press, 1971 ).
H. Y. Hwang, et al., Phys. Rev. Lett. 75 914 (1995)
H. Kuwahara, Science 270, 961 (1995).
Guo-meng Zhao, K. Corder, H. Keller, and K. A. Muller, Nature 381, 676, (1996).
J. Briatico et al., Czechoslovak J. Phys. 46 S4 2013 (1996).
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1998 Springer Science+Business Media New York
About this chapter
Cite this chapter
Allub, R., Alascio, B. (1998). Electronic Theory of Colossal Magnetoresistance Materials. In: Morán-López, J.L. (eds) Current Problems in Condensed Matter. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-9924-8_29
Download citation
DOI: https://doi.org/10.1007/978-1-4757-9924-8_29
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4757-9926-2
Online ISBN: 978-1-4757-9924-8
eBook Packages: Springer Book Archive