Ion Implantation and Annealing

  • E. Rimini
Part of the Physics of Solids and Liquids book series (PSLI)


Ion implantation has emerged in recent years as a common technique to dope semiconductors for integrated-circuit production. Ion implantation is the introduction of energetic charged particles into a substrate. The unique advantages of ion implantation are:
  1. 1.

    Precise on-line control of the total number of implanted ions.

  2. 2.

    Independent control of the penetration depth from the dose.

  3. 3.

    A wide concentration range is achievable, with the upper limit generally set by sputtering yield rather than by equilibrium solubility.

  4. 4.

    Ion implantation fits well into silicon planar technology. The oxide layers used for masking against diffusion can be used to mask against the ion beam.

  5. 5.

    Ion implantation is a low-temperature process, although subsequent annealing is necessary.



Rapid Thermal Annealing Amorphous Layer Target Atom Laser Anneal Furnace Annealing 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


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Copyright information

© Springer Science+Business Media New York 1986

Authors and Affiliations

  • E. Rimini
    • 1
  1. 1.Istituto Dipartimentale di FisicaUniversita di CataniaCataniaItaly

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