Basic Properties in Semiconductor Devices

  • J. A. Pals
Part of the Physics of Solids and Liquids book series (PSLI)


The purpose of this chapter is to provide a brief introduction to the main physical phenomena occurring in semiconductor devices. Because of the dominant position of silicon as a semiconducting material in present-day devices, most of the phenomena discussed here relate to effects occurring in silicon devices. However, attention will also be paid to other materials, such as III–V compounds, which are especially important for semiconductor optical devices.


Conduction Band Valence Band Fermi Level Semiconductor Device Optical Phonon 
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  1. 1.
    R. A. Smith, Semiconductors, Cambridge University Press, Cambridge, England (1961).Google Scholar
  2. 2.
    L. B. Valdes, The Physical Theory of Transistors, McGraw-Hill Book Company, New York (1961).Google Scholar
  3. 3.
    E. Spenke, Elektronische Halbleiter, 2. Auflage, Springer-Verlag, Berlin (1965).CrossRefGoogle Scholar
  4. 4.
    J. Lindmayer and C. Y. Wrigley, Fundamentals of Semiconductor Devices, Van Nostrand, Princeton (1965).Google Scholar
  5. 5.
    A. Many, Y. Goldstein, and N. B. Grover, Semiconductor Surfaces, North-Holland Publishing Company, Amsterdam (1971).Google Scholar
  6. 6.
    A. S. Grove, Physics and Technology of Semiconductor Devices, Wiley and Sons, New York (1967).Google Scholar
  7. 7.
    S. M. Sze, Physics of Semiconductor Devices, 2nd edn., John Wiley and Sons, New York (1981).Google Scholar
  8. 8.
    H. Kressel and J. K. Butler, Semiconductor Lasers and Heterojunction LEDs, Academic Press, New York (1977).Google Scholar
  9. 9.
    H. C. Casey and M. B. Panish, Heîerostructure Lasers, Academic Press, New York (1978).Google Scholar
  10. 10.
    C. Husum, ed., Handbook on Semiconductors, Vol. 4, Device Physics, North-Holland Publishing Company, Amsterdam (1981).Google Scholar
  11. 11.
    E. H. Nicollian and J. R. Brews, MOS Physics and Technology, John Wiley and Sons, New York (1982).Google Scholar
  12. 12.
    S. Pantelides, Rev. Mod. Phys. 50, 797 (1978).ADSCrossRefGoogle Scholar
  13. 13.
    M. Balkanski, A. Aziza, and E. Amzallag, Phys. Status Solidi 31, 323 (1969).CrossRefGoogle Scholar
  14. 14.
    J. W. Slotboom and H. C. de Graaflf, Solid-State Electron. 19, 857 (1976).ADSCrossRefGoogle Scholar
  15. 15.
    H. L. Stornier, A. Chang, D. C. Tsui, J. C. M. Hwang, A. C. Gossard, and W. Wiegman, Phys. Rev. Lett. 50, 1953 (1983).ADSCrossRefGoogle Scholar
  16. 16.
    G. Vincent, A. Chantre, and D. Bois, J. Appl. Phys. 50, 5484 (1979).ADSCrossRefGoogle Scholar
  17. 17.
    P. A. Martin, B. G. Streetman, and K. Hess, J. Appl. Phys. 52, 7409 (1981).ADSCrossRefGoogle Scholar
  18. 18.
    A. Messiah, Quantum Mechanics, Chapter VI, North-Holland Publishing Company, Amsterdam (1958).Google Scholar
  19. 19.
    K. K. Thornber, J. Appl. Phys. 52, 280 (1981).ADSCrossRefGoogle Scholar
  20. 20.
    W. Shockley, Solid-State Electron. 2, 35 (1961).ADSCrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media New York 1986

Authors and Affiliations

  • J. A. Pals
    • 1
  1. 1.Philips Research LaboratoriesEindhovenThe Netherlands

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