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Heterojunction Bipolar Transistors

  • Tadao Ishibashi
Part of the Microdevices book series (MDPF)

Abstract

This chapter describes heterojunction bipolar transistors (HBTs), focusing specifically on A1GaAs—GaAs HBTs for high-speed applications. We give a historical overview of HBTs and discuss the potential advantages of HBTs over other typical high-speed devices (Si bipolar transistors and GaAs field-effect transistors (FETs)). The following section begins with the basic device structure and HBT operation. Section 7.3 deals with fabrication techniques, including epitaxial-layer preparation and processing. High-frequency characteristics and related electron transport peculiar to HBTs are discussed in Section 7.4. The performance of integrated circuits is described in Section 7.5. The last section summarizes state-of-the-art HBT technology and prospects for the future.

Keywords

Minority Carrier Bipolar Transistor Current Gain Emitter Layer Heterojunction Bipolar Transistor 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media New York 1993

Authors and Affiliations

  • Tadao Ishibashi
    • 1
  1. 1.NTT LSI LaboratoriesAtsugi, KanagawaJapan

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