HEMT Materials

  • Kazuo Kondo
  • Junji Komeno
Part of the Microdevices book series (MDPF)

Abstract

Epitaxial material is one of the key factors for the fabrication of advanced high-performance heterojunction devices. New designs in compound semiconductor materials, superlattices, and heterostructure devices have been developed since the pioneering work on molecular-beam epitaxy (MBE), by J. R. Arthur and A. Y. Cho, (1–3) and metal-organic chemical vapor deposition (MOCVD), by H. M. Manasevit.(4) High-electron-mobility transistors (HEMTs)(5) based on selectively doped GaAs-A1GaAs heterojunction structures(6–9) are one of the successful MBE and MOCVD applications.

Keywords

Carrier Concentration Threshold Voltage Epitaxial Layer Gate Length Effusion Cell 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media New York 1993

Authors and Affiliations

  • Kazuo Kondo
    • 1
  • Junji Komeno
    • 1
  1. 1.Fujitsu LimitedFujitsu Laboratories Ltd.AtsugiJapan

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