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Ultrafast Optical Generation of Carriers in a DC Electric Field

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Coherent Optical Interactions in Semiconductors

Part of the book series: NATO ASI Series ((NSSB,volume 330))

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Abstract

Recently, several experimental groups have demonstrated that the ultrafast optical excitation of bulk semiconductors and semiconductor microstructures subjected to a DC electric field produces submillimeter electromagnetic radiation.1–5 The fast-changing photocurrent caused by the ultrafast excitation has been identified as a source of such electromagnetic transients.1 However, the theoretical understanding of the photocurrent on femtosecond time scale is still incomplete.

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References

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© 1994 Springer Science+Business Media New York

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Kuznetsov, A.V., Stanton, C.J. (1994). Ultrafast Optical Generation of Carriers in a DC Electric Field. In: Phillips, R.T. (eds) Coherent Optical Interactions in Semiconductors. NATO ASI Series, vol 330. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-9748-0_24

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  • DOI: https://doi.org/10.1007/978-1-4757-9748-0_24

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4757-9750-3

  • Online ISBN: 978-1-4757-9748-0

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