Study of Exciton Dephasing in Superlattices using Resonant Raman Spectroscopy

  • A. J. Shields
  • M. Cardona
Part of the NATO ASI Series book series (NSSB, volume 330)


Inelastic scattering of light in semiconductors occurs via a process involving electronic excitations as intermediate states. This has facilitated the study of electronic properties through measurement of the Raman intensity as a function of the photon energy, known as the resonance Raman profile (RRP) [1]. Maxima in the RRP occur when either the incident or scattered photon energy equals that of an electronic transition, situations referred to as incoming and outgoing resonance, respectively. Resonances in the Raman scattering efficiency of semiconductor superlattices (SLs) have been observed due to transitions between the valence and conduction subbands [2,3].


Applied Bias Raman Intensity Exciton Peak Dephasing Time Homogeneous Linewidth 
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Copyright information

© Springer Science+Business Media New York 1994

Authors and Affiliations

  • A. J. Shields
    • 1
  • M. Cardona
    • 1
  1. 1.Max-Planck-Institut für FestkörperforschungStuttgartFederal Republic of Germany

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