Analogies Between Coherent Optical Interactions and Quantum Transport in Semiconductor Devices

  • W. Quade
  • F. Rossi
  • E. Schöll
Part of the NATO ASI Series book series (NSSB, volume 330)


The new generations of ultrasmall semiconductor devices are characterized both by very short transit times of the carriers from source to drain of less than a picosecond and by very high electric fields of up to some 106 V/cm. Under such conditions, carriers reach very high energies and are subjected to time scales (for example imposed by phonon scattering) of the order of 100 femtoseconds. Energy nonconserving and collisionally broadened transitions and the influence of the field during the collision (intracollisional field effect) strongly influence the transport behaviour1. It is hard to treat such problems in a full spacedependent quantum mechanical theory. The necessary approximations become very serious and at the very end it is hard to recognize whether the final result still contains characteristic information or is dominated by the approximations. Furthermore specific experiments in devices are very hard to accomplish and measurements often allow for different interpretations.


Impact Ionization High Electric Field Induce Polarization Auger Recombination Accelerate Frame 
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Copyright information

© Springer Science+Business Media New York 1994

Authors and Affiliations

  • W. Quade
    • 1
  • F. Rossi
    • 2
  • E. Schöll
    • 1
  1. 1.Institut für Theoretische PhysikTechnische Universität BerlinBerlinGermany
  2. 2.Fachbereich PhysikUniversität MarburgMarburgGermany

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