Problems in the quantitation of CL analysis were outlined in preceding chapters. The development of quantitative CL analysis is one of the greatest challenges in this field. The development of sensitive and calibrated detection systems and of interpretive theory and semiempirical intensity- and band-shape-parameter-concentration relations are required. Because (1) CL can provide nondestructive microcharacterization of optical and electronic properties of solids, (2) CL detection limits can be much lower than those attainable by the x-ray mode, and (3) there is a general trend toward the computerization of electron microscopy the development of quantitative CL is so desirable as to be almost inevitable. Initial steps toward quantitation have been taken. The work of Warwick (1987) is encouraging, and MARS-correction (mixed injection level, absorption, total internal reflection, and surface recombination) should be developed. Further developments of quantitative CL should also involve Monte Carlo calculations of the generation of excess carriers.
KeywordsSurface Recombination Excess Carrier Preceding Chapter Interpretive Theory Secondary Electron Yield
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