Atomic Force Microscopy Study of Electron Beam Patterned SiO2
An atomic force microscope (AFM) is used to study the patterns obtained from E-beam patterning of SiO2. The SiO2 is patterned using an E-beam, a plasma etcher and a chemical P-etch. Once patterned, the sample is studied with the AFM to determine the topography. Various patterns are made to determine the feasibility of this patterning technique in designing optical devices. Ideal patterning parameters are also explored.
KeywordsAtomic Force Microscope Atomic Force Microscope Image Etch Rate Etching Selectivity Steam Oxide
Unable to display preview. Download preview PDF.
- 3.S.M. Sze, “Semiconductor Devices,” John Wiley & Sons, New York, 429 (1985).Google Scholar
- 8.D.C. Joy, “Principles of Analytical Electron Microscopy,” Plenum, New York, 353 (1986).Google Scholar
- 10.J.C. Russ, Z.J. Radzimski, A. Buczkowski, and L. Maynard, Monte Carlo Modeling of Electron Signals from Heterogeneous Specimens with Nonplanar Surfaces, J. Comput. Assist. Microsc. 2: 59–89 (1990).Google Scholar
- 12.W. Kern and C.A. Deckert, “Thin Film Processes,” J. L. Vossen and W. Kern, eds. Academic Press, New York, 415 (1978).Google Scholar