Atomic Force Microscopy Study of Electron Beam Patterned SiO2

  • John F. Kimball
  • Patricia E. Allen
  • Dieter P. Griffis
  • Zbigniew J. Radzimski
  • Phillip E. Russell

Abstract

An atomic force microscope (AFM) is used to study the patterns obtained from E-beam patterning of SiO2. The SiO2 is patterned using an E-beam, a plasma etcher and a chemical P-etch. Once patterned, the sample is studied with the AFM to determine the topography. Various patterns are made to determine the feasibility of this patterning technique in designing optical devices. Ideal patterning parameters are also explored.

Keywords

Atomic Force Microscope Atomic Force Microscope Image Etch Rate Etching Selectivity Steam Oxide 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media New York 1994

Authors and Affiliations

  • John F. Kimball
    • 1
  • Patricia E. Allen
    • 1
  • Dieter P. Griffis
    • 2
  • Zbigniew J. Radzimski
    • 2
  • Phillip E. Russell
    • 2
  1. 1.Physics & Astronomy DepartmentAppalachian State UniversityBooneUSA
  2. 2.Analytical Instrumentation FacilityNorth Carolina State UniversityRaleighUSA

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