Avalanche Photodiodes (APD) as Proportional Devices

  • R. S. Gilmore
  • A. R. Duell
  • T. J. Llewellyn
  • R. J. Tapper
  • S. Nash
  • K. Xyloparkiotis

Abstract

APDs may be used in proportional detectors for particles. Lowering the temperature gives both a reduction in thermal ionization and an increase in gain. Selective control of the ratio of electron to hole ionization would allow the construction of diodes with larger proportional gains.

Keywords

Bias Voltage Breakdown Voltage Depletion Layer Thermal Ionization Avalanche Photodiode 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. Charpak, G. and Sauli, F., 1978, The multistep avalanche chamber: a new high-rate high-accuracy gaseous detector, Phys. Lett. 78B; 523.Google Scholar
  2. Gilmore, R.S., Lavender, W.M., Leith, D.W.G.S, and Williams, S.H., 1981, High gain multigap avalanche chambers for cherenkov ring imaging IEEE Trans. Nucl. Sci. NS28; 435–438.CrossRefGoogle Scholar
  3. Lorenz, E., Natkaniez, S., Renker, D., Schwarz, B., 1993, Fast readout of plastic and crystal scintillators by avalanche photodiodes, Max Planck Institute report MPI-PhE/93–23.Google Scholar
  4. Sze, S.M., 1981, “Physics of Semiconductor Devices” Publisher, John Wiley.Google Scholar

Copyright information

© Springer Science+Business Media New York 1995

Authors and Affiliations

  • R. S. Gilmore
    • 1
  • A. R. Duell
    • 1
  • T. J. Llewellyn
    • 1
  • R. J. Tapper
    • 1
  • S. Nash
    • 1
  • K. Xyloparkiotis
    • 1
  1. 1.H. H. Wills Physics LabBristol UniversityEngland

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