Abstract
Quantum well infrared photodetectors (QWIPs)[1] have recently attracted a great deal of attention. Although the absolute performance[2] of single element detectors is somewhat inferior than the standard HgCdTe technology for the long wavelength infrared (IR), advantages of QWIP approach based on GaAs and Si multiple quantum wells (MQWs) are obvious, including, e.g., mature materials and processing, and extremely uniform and low defect densities suitable for large array fabrication. Moreover we believe that with the advances in our understanding of the physics involved, the QWIP’s performance related, e.g, the dark current and operating temperature will be improved. Another distinct feature of the QWIP approach is the capability of producing multicolor and multiband detectors.
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Liu, H.C., Li, J., Buchanan, M., Wasilewski, Z.R., Wilson, P.H., Simmons, J.G. (1995). A Unique Capability of Quantum Well Infrared Photodetectors: Multicolor and Multiband Response. In: Lampropoulos, G.A., Chrostowski, J., Measures, R.M. (eds) Applications of Photonic Technology. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-9247-8_82
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