Abstract
The capacitance measurement of Pd/La2−xSrxCu04/(100)SrTiO3/Pd multi-layer structure at low ac frequency 40Hz–100kHz shows the increase of its capacitance C t at Sr-doping factor x =1/2k with the decrease at x =1/(2k+1) where k is integer. Strong correspondence is found between the observed x − C t relationship and the v − ΔE relationship known in the fractional quantum Hall effect, where y is the electron filling factor and ΔE is the 2D electron energy. The correspondence exists in the following points. (i) Both x and v are the filling factor of carriers in quantum sites. (ii) Peaks are found when the factors are 1/(even integer). (iii) Sharp valleys are found when the factors are 1/(odd integer). The origin of the correspondence is discussed based on the similarity between the 2D electron state in strong magnetic field and the hole carrier state in the presence of space charge in La2−xSrxCuO4 with periodic block-layer potential.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
R.B. Laughlin, Phys. Rev. Lett. 50, 1395 (1983).
M.Sugahara, S.-B.Wu, X.-Y.Han, H.-F.Lu, H.Q.Yin, N.Haneji and N. Yoshikawa, Extended Abstract of 1997 (ISTEC/ MRS) International Workshop on Superconductivity (Hawaii, 1997 ) p377.
There is alternative possibility that 2x = v0 for hole-pair FQHE state from the considerationof the symmetry of wave function.
R.B. Laughlin, in “The Quantum Hall Effect” Springer, Berlin (1987).
S.M.Girvin, in “The Quantum Hall Effect” Springer, Berlin (1987).
B.I. Halperin, Phys. Rev. Lett. 52, 1583 (1984).
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1998 Springer Science+Business Media New York
About this chapter
Cite this chapter
Sugahara, M., Lu, H.F., Yin, H.Q., Kaneda, H., Haneji, N., Yoshikawa, N. (1998). Evidence of Strong Relationship Between Carrier States in Fractional Quantum-Hall Effect and in High- Temperature Superconductivity Found in Dielectric Measurement of La2−xSrxCuO4 Film. In: Balachandran, U.B., Gubser, D.G., Hartwig, K.T., Reed, R.P., Warnes, W.H., Bardos, V.A. (eds) Advances in Cryogenic Engineering Materials . Advances in Cryogenic Engineering, vol 44. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-9056-6_97
Download citation
DOI: https://doi.org/10.1007/978-1-4757-9056-6_97
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4757-9058-0
Online ISBN: 978-1-4757-9056-6
eBook Packages: Springer Book Archive