Synthesis of TlBa2Ca2Cu3Ox Thick Layer on Metal Tapes Through the Diffusion Reaction

  • A. Kikuchi
  • K. Tachikawa
  • M. Ogasawara
  • T. Nakamura
Part of the Advances in Cryogenic Engineering book series (ACRE, volume 44)


TI-based high-T c oxide layers have been synthesized through the reaction between a T1-free substrate and a coating layer containing TI. The T1F substitution for T12O3 in the coating layer promotes the formation of the T1-1223 phase, which significantly improves the I c -B performance at higher temperatures. The behavior of our F during the reaction and the mechanism of the enhancement of the synthesis of T1-1223 phase by the TIF substitution have been studied. Meanwhile, thick T1-1223 layers, a few hundred μm in thickness, have been formed on Ni tape with good bonding through the diffusion reaction. The same reaction condition can be applied for the synthesis of T1-1223 phase on Ni tape as that for the bulk specimen with almost no degradation in superconducting performance.


Coating Layer Diffusion Layer Diffusion Reaction Bulk Specimen EPMA Analysis 
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Copyright information

© Springer Science+Business Media New York 1998

Authors and Affiliations

  • A. Kikuchi
    • 1
  • K. Tachikawa
    • 1
  • M. Ogasawara
    • 1
  • T. Nakamura
    • 1
  1. 1.Faculty of EngineeringTokai UniversityHiratsuka, KanagawaJapan

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