In Situ MOCVD of Dielectric Materials for High-Tc Superconducting Devices

  • Bin Han
  • Deborah A. Neumayer
  • Bruce H. Goodreau
  • Tobin J. Marks
Part of the An International Cryogenic Materials Conference Publication book series (ACRE, volume 40)


Devices which utilize high-Tc superconducting films require dielectric materials with low dielectric losses (tan δ), low dielectric constants, chemical inertness, and similar coefficients of thermal expansion to HTS materials. A major advance in the fabrication of such devices would be the deposition of high quality dielectric films by MOCVD (metal-organic chemical vapor deposition) which would enable the efficient, large-scale fabrication of multilayer superconductor-insulator structures. In this paper, we report the MOCVD deposition of epitaxial thin films of various pervoskite HTS lattice-matched dielectric materials: NdGaO3, PrGaO3, YA1O3, and Sr2AlTaO6. These pervoskite dielectric films were grown in situ on single crystal substrates in a horizontal reactor using volatile metal-organic b-diketonate complexes as precursors. Film morphology and microstructure are characterized by SEM and cross-sectional TEM. Energy dispersive x-ray analysis is used to verify the stoichiometry. The crystallinity and epitaxy of the dielectric films are characterized by x-ray diffraction.


High Temperature Superconductor YBCO Film Diffraction Plane High Resolution Electron Microscopy Epitaxial Thin Film 
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Copyright information

© Springer Science+Business Media New York 1994

Authors and Affiliations

  • Bin Han
    • 1
  • Deborah A. Neumayer
    • 1
  • Bruce H. Goodreau
    • 1
  • Tobin J. Marks
    • 1
  1. 1.Department of Chemistry, the Materials Research Center, and the Science and Technology Center for SuperconductivityNorthwestern UniversityEvanstonUSA

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