Electrical Characteristics of Al-Y Dilute Alloys under Low-Temperature Plastic Deformation
Highly pure Al alloyed with 0.001 to 0.1 mass % Y was studied to determine the optimal combination of electrical and mechanical properties required for its application as a cryoconductor in powerful electromagnetic systems. The experimental conditions approximated solenoid-winding operational conditions: transverse magnetic fields as high as 8 T, temperature range of 4 to 77 K, and low-temperature plastic deformation. From the data obtained, we were able to determine the deformation contribution to electrical resistivity and to define its temperature and magnetic field dependences for Al containing different amounts of Y. Annealing the specimens at room temperature for 48 h enabled us to derive dislocation and point-defect parts of deformation-induced resistivity, which in turn, enabled us to analyze the electron-phonon, electron-dislocation, and electron-defect scattering processes and to differentiate the relaxation mechanisms of conduction electrons with and without magnetic fields. Results showed that Y additions to Al lead to suppression of inelastic scattering mechanisms, even in strong magnetic fields, without a substantial loss of electrical conductivity.
KeywordsElectrical Resistivity Strong Magnetic Field Transverse Magnetic Field Deformation Part Residual Resistivity Ratio
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