Silicon Pressure Sensor for in Situ Pressure Measurement in a Pressurized Superfluid Helium Environment

  • T. Haruyama
  • N. Kimura
  • T. Nakamoto
Part of the Advances in Cryogenic Engineering book series (ACRE, volume 43)

Abstract

A silicon piezo-resistive pressure sensor is investigated for possible in situ pressure measurement in a pressurized superfluid helium environment. A small pressure sensor, PD116, from Toyoda Machine Works Ltd, has been reported as an applicable sensor for in situ pressure measurement up to the maximum pressure of 3 MPa at cryogenic temperatures down to 6 K. It has a low temperature coefficient of sensitivity around 200 ppm/K between 300 and 6 K. In order to evaluate the applicability in a pressurized superfluid helium environment, the PD116 sensor was set in a specific cryostat which can provide superfluid helium environment. The characteristics of the sensor were measured for the pressure range from 100 kPa to 170 kPa at 4.2 K and 2.0 K. A driving current of 1 mA was applied to the sensor in order to limit heat dissipation to less than 1 mW. The pressure dependence of the output voltage of the sensor also indicates high linearity at temperatures lower than 4.2 K. The experimental results of this study clearly indicate a possible use of this sensor for in situ pressure measurement in a pressurized superfluid helium environment.

Keywords

Output Voltage Sample Holder Driving Current Superfluid Helium Thermal Cycling Test 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media New York 1998

Authors and Affiliations

  • T. Haruyama
    • 1
  • N. Kimura
    • 1
  • T. Nakamoto
    • 1
  1. 1.KEKHigh Energy Accelerator Research OrganizationTsukuba, Ibaraki 305Japan

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