Abstract
Study of the state of the interface between semiconductors with a lattice of the diamond type and polar media is of definite interest for solution of a broad range of problems. The pressing need for research on the surface properties of semiconductors is specifically related to determination of the physicochemical nature of impurity centers, which will permit establishment of the correlation between the properties of these centers (concentration, capture cross section, etc.) and the experimentally measured electrophysical parameters [1].
Translated from Struktura i Rol’ Vody v Zhivom Organizme 1:108–113 (1966). This article is based on a paper presented at the 16th All-Union Conference on Spectroscopy, Moscow, 1965.
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Zolotarev, V.M. (1971). The Germanium-Water Interface. In: Vuks, M.F., Sidorova, A.I. (eds) Water in Biological Systems. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-6955-5_5
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