The Germanium-Water Interface

  • V. M. Zolotarev

Abstract

Study of the state of the interface between semiconductors with a lattice of the diamond type and polar media is of definite interest for solution of a broad range of problems. The pressing need for research on the surface properties of semiconductors is specifically related to determination of the physicochemical nature of impurity centers, which will permit establishment of the correlation between the properties of these centers (concentration, capture cross section, etc.) and the experimentally measured electrophysical parameters [1].

Keywords

Liquid Water Capture Cross Section Surface Hydroxyl Adsorption Center Electrophysical Parameter 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media New York 1971

Authors and Affiliations

  • V. M. Zolotarev

There are no affiliations available

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