The Problems of Picosecond Analog Devices Modeling and Creation

Abstract

In the last years the works on development picosecond pulse range are intensity developed. The great successes in high-voltage picosecond pulse generation, formation, amplification, control of parameters and registration are achieved. However the theoretical and applied bases of creation of the amplifiers, devices of amplitude picosecond pulse controlling and other devices in working frequency band from a zero or 1 ...10 kHz up to 1 ...10 GHz are not enough developed. The complexity of their creation is stipulated extremely by high significance of a frequency range factor. In the most of practical problems it resulted to necessary of the element characteristics realization, near to limiting (potential). As a result essentially difficulties of the analysis and synthesis of parameters grow because the classical models in the basis R,L,C- elements and operator function has high order. The active and passive elements not always satisfy to the requirements on duration of processable signals because of change of reactive conductivity character in a frequency band or incompatibility of electrical or design-technical characteristics. Besides those element sizes become commensurable with of working range wave length, that causes dependence of pulse signal parameters (delay, amplitude, form) from the element geometry sizes and their connections. Additional transfer parasitic channels, transformation and formation of pulses are creating. A multi-channeling becomes the characteristic structural attribute of the systems. It results to necessary of research the signal transformation and formation processes at a structurally functional level and to necessary of the highspeed problem complex decisions, based on development of the system theory.