Abstract
The ability of high gain GaAs Photoconductive Semiconductor switches (PCSS) to deliver fast risetime, low jitter pulses when triggered with small laser diode arrays makes them suitable for their use in ultrawide bandwidth (UWB), impulse transmitters. This paper will summarize the state-of-the-art in high gain GaAs switches and discuss how GaAs switches are being implemented in a transmitter for detection of underground structures. The advantage of this type of semiconductor switch is demonstrated operation at high voltages (100 kV) and repetition rates (1 kHz) with the potential for much higher repetition rates. The latter would increase the demonstrated average powers of 100 W to 1 kW and higher. We will also present an analysis of the effectiveness of different pulser geometries that result in transmitted pulses with varying frequency content. To this end, we have developed a simple model that includes transmit and receive antenna response, attenuation and dispersion of the electromagnetic impulses by the soil, and target cross sections.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
G. M. Loubriel, M. W. O’Malley, and F. J. Zutavern, “Toward Pulsed Power Uses for Photoconductive Semiconductor Switches: Closing Switches,” Proc. 6th IEEE Pulsed Power Conference, P. J. Turchi and B. H. Bernstein, Arlington, VA, 1987, p. 145.
G. M. Loubriel, F. J. Zutavern, M. W. O’Malley, and W. D. Helgeson, “High Gain GaAs Photoconductive Semiconductor Switches for Impulse Sources,” Proc. of SPIE Optically Activated Switching Conference IV, SPIE Proc. Series Vol. 2343, pp. 180186, W. R. Donaldson, ed., Boston, MA, October 31-November 4, 1994.
F. J. Zutavern and G. M. Loubriel, “High Voltage Lateral Switches from Si or GaAs,” High-Power Optically Activated Solid-State Switches, A. Rosen and F. J. Zutavern, Artech House, Boston, 1993, p. 245.
See Proceedings from: 6–8th IEEE Pulsed Power Conf., 1987, 1989, 1991; 18–20th IEEE Power Modulator Symposium, 1988, 1990, 1992; SPIE Optically Activated Switching I-III, (vol. 1378, 1632, 1873), 1990, 1992, 1993; and IEEE Trans. Elec. Devices, (vol. 37, 38), 1990, 1992.
R. S. Clark, L. F. Rinehart, M. T. Buttram, and J. F. Aurand, “An overview of Sandia National Laboratories’ Plasma Switched, GigaWatt, Ultra-Wideband Impulse-Transmitter Program,” Ultra-Wideband, Short Pulse Electromagnetics, L. Bertoni, L. Carin, and L. Felsen, Plenum Press, New York, 1993, pp. 93–98.
B. C. Brock and W. E. Patitz, “Optimum Frequency for Subsurface-Imaging Synthetic Aperture Radar,” Sandia National Laboratories’ report SAND93–0815 and B. C. Brock and K. W. Sorensen, “Electromagnetic Scattering from Buried Objects,” report SAND94–2361.
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1997 Springer Science+Business Media New York
About this chapter
Cite this chapter
Loubriel, G.M., Buttram, M.T., Aurand, J.F., Zutavern, F.J. (1997). Ground Penetrating Radar Enabled by High Gain GaAs Photoconductive Semiconductor Switches. In: Baum, C.E., Carin, L., Stone, A.P. (eds) Ultra-Wideband, Short-Pulse Electromagnetics 3. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-6896-1_3
Download citation
DOI: https://doi.org/10.1007/978-1-4757-6896-1_3
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4419-3276-1
Online ISBN: 978-1-4757-6896-1
eBook Packages: Springer Book Archive