Abstract
In Chapter 5 through Chapter 7, realistic fault models, based on defect injection and circuit simulation, together with their tests have been presented for two-port memories. In addition, the impact of port restrictions on the fault models, as well as on the tests, have been addressed.
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© 2004 Springer Science+Business Media New York
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Hamdioui, S. (2004). Experimental analysis of p-port SRAMs. In: Testing Static Random Access Memories. Frontiers in Electronic Testing, vol 26. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-6706-3_8
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DOI: https://doi.org/10.1007/978-1-4757-6706-3_8
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4419-5430-5
Online ISBN: 978-1-4757-6706-3
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