Abstract
In Chapter 4, the preparation needed to begin with the multi-port SRAM simulation has been presented; this included a complete analysis of spot defects in a differential multi-port memory cell array, the simulation model, as well as the simulation methodology.
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© 2004 Springer Science+Business Media New York
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Hamdioui, S. (2004). Experimental analysis of two-port SRAMs. In: Testing Static Random Access Memories. Frontiers in Electronic Testing, vol 26. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-6706-3_5
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DOI: https://doi.org/10.1007/978-1-4757-6706-3_5
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4419-5430-5
Online ISBN: 978-1-4757-6706-3
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