Electrons in Lateral Microstructures on Indium. Antimonide

  • U. Merkt
  • Ch. Sikorski
  • J. Alsmeier
Part of the NATO ASI Series book series (NSSB, volume 206)

Abstract

Advances of lithography and etching techniques now make it possible to laterally confine quasi-two-dimensional (2D) electron gases at semiconductor interfaces into wires or dots of widths below 100 nm.1 Since such widths are less than the mean free path of electrons at low temperatures, one induces quasi one-dimensional (1D) or zero-dimensional (0D) electronic behavior in the wires and dots, respectively, and observes novel phenomena in the transport2 and optical3 properties.

Keywords

Gate Voltage High Magnetic Field Electron Number Quantum Wire Dipole Matrix Element 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media New York 1989

Authors and Affiliations

  • U. Merkt
    • 1
  • Ch. Sikorski
    • 1
  • J. Alsmeier
    • 1
  1. 1.Institut für Angewandte PhysikUniversität HamburgHamburg 36Germany

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