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Hot Phonons in Microstructures

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Spectroscopy of Semiconductor Microstructures

Part of the book series: NATO ASI Series ((NSSB,volume 206))

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Abstract

The transient as well as steady-state dynamics of highly energetic carriers in semiconductors is of great interest for both basic research and technological applications in electrical and electrooptical devices. In recent years hot-carrier spectroscopy in bulk and microstructured III-V compounds has given strong evidence for a substantial, nonequilibrium-LO-phonon induced reduction of the electronic energy transfer into the lattice. The present report gives a general introduction into the concept of “hot phonons”, discusses their possible consequences for the response of photo-and/or d.c.field-excited hot carriers in GaAs-based quantum-well and multiquantumwell structures, and summarizes the experimental and theoretical support for these expectations.

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Author information

Authors and Affiliations

  1. Institut für Theoretische Physik, Universität Graz, Universitätsplatz 5, A-8010, Graz, Austria

    P. Kocevar

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  1. P. Kocevar
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Editors and Affiliations

  1. University of Cambridge, Cambridge, UK

    Gerhard Fasol

  2. International School for Advanced Studies (SISSA), Trieste, Italy

    Annalisa Fasolino

  3. University of Rome II, Rome, Italy

    Paolo Lugli

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Kocevar, P. (1989). Hot Phonons in Microstructures. In: Fasol, G., Fasolino, A., Lugli, P. (eds) Spectroscopy of Semiconductor Microstructures. NATO ASI Series, vol 206. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-6565-6_40

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  • DOI: https://doi.org/10.1007/978-1-4757-6565-6_40

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4757-6567-0

  • Online ISBN: 978-1-4757-6565-6

  • eBook Packages: Springer Book Archive

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