Abstract
Cyclotron resonance has been studied for 2-D electrons in GaAs-GaAlAs heterojunctions as a function of energy and electron concentration. The strength of the resonant polaron coupling is a strong function of the 2-D carrier density indicating the importance of screening and Landau level occupancy. For low density coupling is seen to the L.O. phonons which is slightly stronger than found in bulk GaAs, and mass enhancements as large as 10% have been observed. At high carrier concentrations the resonant coupling is almost totally suppressed by the exclusion principle, when the lowest Landau level approaches full occupancy at the polaron resonance condition. At higher temperatures the polaron coupling has different temperature variations depending on the energy and carrier concentration. For high concentrations second harmonic polaron coupling could be seen.
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Nicholas, R.J. et al. (1989). Polaron Coupling in GaAs-GaAlAs Heterostructures Observed by Cyclotron and Magnetophonon Resonance. In: Fasol, G., Fasolino, A., Lugli, P. (eds) Spectroscopy of Semiconductor Microstructures. NATO ASI Series, vol 206. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-6565-6_30
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