Aspects of the Growth of InP/InGaAs Multi-Quantum Well Structures by Gas Source Molecular Beam Epitaxy
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Gas Source MBE including Chemical Beam Epitaxy is shown to be a promising technique for the growth of heterostructures involving the incorporation of both arsenic and phosphorus species.
Planar quantum confined Stark effect modulators/detectors have been fabricated from InP/InGaAs multi-quantum well stacks containing 200 wells. The layer sequences have been analysed by both optical and double crystal X-ray techniques. The modulator structures have shown excellent uniformity of the grown layers in both the growth and lateral dimensions — properties which are essential for the fabrication of modulator arrays.
4×4 Arrays have been constructed and have shown state of the art modulation coupled with low leakage currents.
KeywordsMolecular Beam Epitaxy Group Versus Layer Sequence Order Satellite Modulator Array
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