Aspects of the Growth of InP/InGaAs Multi-Quantum Well Structures by Gas Source Molecular Beam Epitaxy
Gas Source MBE including Chemical Beam Epitaxy is shown to be a promising technique for the growth of heterostructures involving the incorporation of both arsenic and phosphorus species.
Planar quantum confined Stark effect modulators/detectors have been fabricated from InP/InGaAs multi-quantum well stacks containing 200 wells. The layer sequences have been analysed by both optical and double crystal X-ray techniques. The modulator structures have shown excellent uniformity of the grown layers in both the growth and lateral dimensions — properties which are essential for the fabrication of modulator arrays.
4×4 Arrays have been constructed and have shown state of the art modulation coupled with low leakage currents.
KeywordsMolecular Beam Epitaxy Group Versus Layer Sequence Order Satellite Modulator Array
Unable to display preview. Download preview PDF.
- 4.D S Chemla, D A B Miller and P W Smith, Opt Eng., 24 556, 1985.Google Scholar
- 5.W T Tsang, IEEE CircundDev., to be published.Google Scholar
- 6.G J Davies and D A Andrews, Chemtronics, 3, 3, 1988.Google Scholar
- 7.Y Kawaguchi, H Asahi and H Nagai, Conf. on Solid State Devices, Tokyo 1986, 619.Google Scholar
- 8.JS Foord(Univ Oxford) private communication.Google Scholar
- 11.W J Bartels, J Vac Sci Technol., 81, 338, 1983.Google Scholar
- 17.M H Lyons and M A G Halliwell, Advanced Materials for Telecommunications eds P A Glasgow, Y I Nissim, J-P Noblanc and J Speight (Paris:Les Editions de Physique), 323, 1986.Google Scholar
- 19.M H Lyons J Crystal Growth 1989 in press.Google Scholar
- 20.P F Fewster, Philips J Res., 41, 338, 1986.Google Scholar
- 21.M H Lyons, E G Scott and M A G Halliwell, ‘Microscopy of Semicond. Mats.’ Inst Phys Conf Ser., 1989, to be published.Google Scholar