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MOCVD-Grown Atomic Layer Superlattices

  • Akira Ishibashi
Part of the NATO ASI Series book series (NSSB, volume 206)

Abstract

We have grown atomic layer superlattices, i.e., ultrathin-layer superlattices and double delta-doped structures, based on metalorganic chemical vapor deposition. The (AlAs)m(GaAs)n ultrathin layer superlattices have been characterized by photoluminescence and Raman scattering experiment. The ultrathinlayer superlattice is revealed to be a system of quasi-three dimensional electrons and quasi-two dimensional LO phonons. The lowest conduction band in the superlattice is indicated to be a zone-folding-induced mixed-state of X and Γ bands. An idea of the isotope superlattices is proposed. We have used the double delta-doped structure to fabricate nano-structure devices with the aid of electron-beam-induced resist process, demonstrating a potential interest of universal field-effect-transistor.

Keywords

Transmission Electron Micro Slab Thickness Metalorganic Chemical Vapor Deposition Photoluminescence Intensity Atomic Layer Epitaxy 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media New York 1989

Authors and Affiliations

  • Akira Ishibashi
    • 1
  1. 1.SONY Corporation Research CenterYokohama 240Japan

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