Abstract
The Raman spectrum of an ultra-thin layer of Ge in Si(100) or an ultra-thin layer of Si in Ge(100) can be used to characterize the homogeneity of the layer, the abruptness of the interfaces, the effects of localization on the optical phonons and the spatial extent of critical points which contribute to the resonant Raman scattering. Homogeneous layers with abrupt interfaces require growth at temperatures just above the minimum temperature for epitaxial, crystalline growth. The optical phonons of Ge and Si layers show both local and resonance properties while the E1 gap in Ge shows localized properties.
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Tsang, J.C. (1989). Characterization of Ge-Si Interfaces and Ultra-Thin Ge Layers by Raman Scattering. In: Fasol, G., Fasolino, A., Lugli, P. (eds) Spectroscopy of Semiconductor Microstructures. NATO ASI Series, vol 206. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-6565-6_11
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DOI: https://doi.org/10.1007/978-1-4757-6565-6_11
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