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Investigation of the Energy Band Structure of Semiconductors by Differential Optical Methods

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Radiative Recombination in Semiconducting Crystals

Part of the book series: The Lebedev Physics Institute Series ((LPIS))

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Abstract

The electroreflection and thermoreflection spectra of GaAs single crystals were investigated in the 1.00–4.00 eV range at various temperatures. The results were used to determine the gaps between the energy bands and the values of the spin — orbit splitting of the valence band at the symmetry points Γ, L, and A of the Brillouin zone. Single crystals of CdTe were studied and it was found that the Coulomb interaction between electrons and holes should be allowed for in the electroreflection studies. The ground (n = 1) and the first excited (n = 2) exciton states were observed at liquid nitrogen temperature.

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Authors
  1. S. G. Dzhioeva
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Editors and Affiliations

  1. P. N. Lebedev Physics Institute, Academy of Sciences of the USSR, Moscow, Russia

    D. V. Skobel’tsyn (Director) (Director)

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Dzhioeva, S.G. (1975). Investigation of the Energy Band Structure of Semiconductors by Differential Optical Methods. In: Skobel’tsyn, D.V. (eds) Radiative Recombination in Semiconducting Crystals. The Lebedev Physics Institute Series. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-6344-7_5

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  • DOI: https://doi.org/10.1007/978-1-4757-6344-7_5

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4757-6346-1

  • Online ISBN: 978-1-4757-6344-7

  • eBook Packages: Springer Book Archive

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