Investigation of Injection Lasers

  • P. G. Eliseev
Part of the The Lebedev Physics Institute Series book series (LPIS)

Abstract

Semiconductor lasers excited by injection in a p-n junction (injection lasers) first came into being in 1962 after the suggestion in 1961 [1] that degenerate p-n junctions could be used for this purpose. The realization of the concept was preceded by experiments with heavily-doped gallium arsenide diodes [2–4]. The first semiconductor lasers were created in several laboratories almost simultaneously [5–9]. Immediately afterward programs were developed in many laboratories to study the operating mechanism of the new lasers and to find ways of improving their characteristics. The interest in semiconductor lasers stems from a number of their advantages over other types of lasers and other radiation sources.

Keywords

Gallium Arsenide Excitation Level Directivity Pattern Threshold Current Density Injection Laser 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media New York 1972

Authors and Affiliations

  • P. G. Eliseev

There are no affiliations available

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