Semiconductor lasers

  • E. Wintner
Part of the Engineering Lasers and Their Applications book series (LSAS, volume 2)


At first glance, the semiconductor laser, or more precisely the semiconductor diode laser, is a special solid state laser, but for good reasons it is usually treated as a laser family of its own. Solid-state lasers in general are formed by a laser medium which is represented by a host material (of crystalline or glassy nature) doped by suitable ions (rare earths, transition elements). Generally, those dopants have clearly defined energy levels, which are more or less perturbed, i.e. broadened, by the binding fields of the host. However, in case of the semiconductor laser the lasing transitions take place between the valence and conduction bands as a consequence of the collective interaction processes of the electrons and the lattice as a whole. Therefore, the density of energy levels is extremely high in comparison to any other laser material. The excitation, represented by mobile electrons and holes, can be transported through the crystal to the recombination area which is called the active zone.


Diode Laser Active Layer Semiconductor Laser Bragg Wavelength Master Oscillator Power Amplifier 
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  1. Alferov, Zh. 1. and Kazarinov, R. F. (1963) Author’s certificate 1032155/26–25, USSRGoogle Scholar
  2. Basov, N.G., Kroklin, O.N. and Popov, Y. M. (1961) Production of negative temperature states in p-n junctions of degenerate semiconductors. Pis’ma Zh. Eksp. Theor. Fiz., 40, p1879. Also, Soy. Phys. JETP, 13, p1320 (1961)Google Scholar
  3. Chai, B. H. T. (1995) private communication, June 1995Google Scholar
  4. Einstein, A. (1917) Zur Quantentheorie der Strahlung, Physikalische Zeitschrift, 18, p121Google Scholar
  5. Faist, J. et al. (1996) Appl. Phys. Letts. 68, p3680CrossRefGoogle Scholar
  6. Gunshor, R. L. and Nurmikko, A. V. (1995) Blue-green laser-diode technology moves ahead, Laser Focus World, March 1995, p97.Google Scholar
  7. Hall, R. N. et al. (1962) Coherent light emission from GaAs p-n junctions. Phys. Rev. Letts. 9, p366CrossRefGoogle Scholar
  8. Hayashi, I. (1970) Junction lasers which operate continously at room temperature, Appl. Phys. Letts. 17, p109CrossRefGoogle Scholar
  9. Herman, T. C. Meingailis, I. (1974) Narrow Gap Semiconductors in Applied Solid State Science Advances in Materials and Device Research, 4, (ed.Wolfe, R.) Academic Press, pp 1–94, New York, London.Google Scholar
  10. Kroemer, H. (1963) A proposed class of heterojunction injection lasers, Proc. IEEE, 51, p1782CrossRefGoogle Scholar
  11. Maiman, T. (1960) Nature, 187, p493CrossRefGoogle Scholar
  12. Nathan, M. I. et al (1962) Stimulated emission of radiation from GaAs p-n junctions, Appl. Phys. Letts., 1, p62CrossRefGoogle Scholar
  13. Quist, T. M. et al. (1962) Semiconductor maser of GaAs, Appl. Phys.Letts., 1, p91.CrossRefGoogle Scholar

Books and reviews recommended for further information

  1. Agrawal, G. P. and Dutta, N. K. (1986) Long Wavelength Semiconductor Lasers, Van Nostrand Reinhold, New York 1986CrossRefGoogle Scholar
  2. Botez, D. and Scifres, D.R. (1994) Diode Laser Arrays in Cambridge Studies in Modern Optics, 14, Cambridge University Press (ISBN 0–521–41975–1)Google Scholar
  3. Buus, J. (1991) Single Frequency Semiconductor Lasers in Tutorial texts in optical engineering, TT5, SPIE Optical Engineering Press, Bellingham (ISBN 0–8194–0535–3)Google Scholar
  4. Eberling, K. J. (1989) Integrierte Optoelektronik, Springer, BerlinCrossRefGoogle Scholar
  5. Eberling, K.J. (1996) Semiconductor Lasers: Recent Advances and Prospects, Tutorial talk at ECLEO, HamburgGoogle Scholar
  6. Evans, G.A. and Hammer, J.M. (1993) Surface Emitting Semiconductor Lasers and Arrays in Quantum Electronics – Principles and Applications, Academic Press, Boston (ISBN 0–12–244070–6)Google Scholar
  7. Fukuda, M. (1991) Reliability and Degradation of Semiconductor Lasers and LEDS,Artech House, Boston, (ISBN 0–89006–465–2)Google Scholar
  8. IEEE Journal of Quantum Electronics, 29, June 1993 ( Special Issue on Semiconductor Lasers )Google Scholar
  9. IEEE Selected Topics in Quantum Electronics, 1, June 1995 ( Special Issue on Semiconductor Lasers )Google Scholar
  10. Mroziewics, B. Bugajski M. and Nakwaski, W. (1991) Physics of Semiconductor Lasers,North-HollandGoogle Scholar
  11. Pearsall, T.P. (1982) GaInAsP Alloy Semiconductors,John Wiley and Sons, Chichester (ISBN 0–471–10119–2).Google Scholar
  12. Petermann, K. (1988) Laser Diode Modulation and Noise, Kluwer Academic Publishers, DordrechtCrossRefGoogle Scholar
  13. Proceedings of 14th IEEE International Semiconductor Laser Conference (Maui, Hawaii, USA), 1994, Institute of Electrical and Electronics Engineers 1994Google Scholar
  14. Thompson, G.H.B. (1980) Physics of Semiconductor Laser Devices,John Wiley and Sons, Chichester, (ISBN 0–471–27685–5)Google Scholar
  15. Vasil’ev, P. Ultrafast diode lasers,Artec House, Boston, 1995 (ISBN 0–89006–736–8).Google Scholar
  16. Welch, D., Spectra Diode Labs was cited by Eberling (1996)Google Scholar
  17. Zory, P.S. Jr. (editor), (1993) Quantum Well Lasers, Academic Press, New YorkGoogle Scholar

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© Springer Science+Business Media Dordrecht 1998

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  • E. Wintner

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