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Optically Detected Magnetic Resonance of Defects in Semiconductors

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EPR of Free Radicals in Solids

Part of the book series: Progress in Theoretical Chemistry and Physics ((PTCP,volume 10))

Abstract

This chapter provides a review of the optically detected magnetic resonance (ODMR) techniques. The principle and methods of a variety of the ODMR technique, namely ODMR by different ways of optical detection, ODMR in zero field or in the presence of an external magnetic field, cw-and time-resolved ODMR, will be described. The ability of the ODMR technique to provide important information on physical properties of defects in semiconductors, such as chemical identification, electronic and geometric structure, related carrier recombination, etc., will he demonstrated. Recent progress, trends and prospects in achieving high spectral, time and spatial resolution of the ODMR techniques will also be outlined.

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Author information

Authors and Affiliations

  1. Department of Physics and Measurement Technology, Linkoping University, S-581 83, Linkoping, Sweden

    Weimin M. Chen

Authors
  1. Weimin M. Chen
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Editor information

Editors and Affiliations

  1. Department of Physics and Measurement Technology, Linköping University, S-581 83, Linköping, Sweden

    Anders Lund

  2. Department of Applied Chemistry, Graduate School of Engineering, Hiroshima University, 739-8527, Higashi-Hiroshima, Japan

    Masaru Shiotani

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© 2003 Springer Science+Business Media Dordrecht

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Chen, W.M. (2003). Optically Detected Magnetic Resonance of Defects in Semiconductors. In: Lund, A., Shiotani, M. (eds) EPR of Free Radicals in Solids. Progress in Theoretical Chemistry and Physics, vol 10. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-5166-6_15

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  • DOI: https://doi.org/10.1007/978-1-4757-5166-6_15

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4419-5246-2

  • Online ISBN: 978-1-4757-5166-6

  • eBook Packages: Springer Book Archive

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