Abstract
In the present article we describe an infrared television microscope suitable for investigations of the recombination radiation and optical properties of semiconductors in the wavelength range from 0.5 to 2.3 μ.
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Literature Cited
N. I. Murashov and G. D. Shnyrev, Photoelectric Infrared Polaroscopic and Flaw Detection Techniques in Semiconductor Materials, Collection edited by V. I. Grechushnikov, Izd. AN SSSR (1963), p. 40.
O. Deutschbein and M. Bernard, Solid State Physics, Semiconductors, 1: 117 (1960).
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© 1970 Springer Science+Business Media New York
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Artem’ev, N.L., Bagaev, V.S., Gogolin, O.V., Efimov, Y.A., Kopylovskii, B.D. (1970). Infrared Television Microscope for the Investigation of Recombination Radiation and the Optical Properties of Semiconductors. In: Skobel’tsyn, D.V. (eds) Electronics in Experimental Physics. The Lebedev Physics Institute Series, vol 42. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-5109-3_20
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DOI: https://doi.org/10.1007/978-1-4757-5109-3_20
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4757-5111-6
Online ISBN: 978-1-4757-5109-3
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