Measurements of basic nonlinearities of transistors
In the absence of reliable transistor models and/or an accurate parameter extraction, one could consider to measure nonlinearity coefficients. This chapter concentrates on how higher-order derivatives of the transistor current can be measured accurately. The measurement results could be used in device parameter extraction. Only measurements on a bipolar transistor are presented in this chapter. The principles can be applied to MOS transistors as well.
KeywordsCollector Current Input Port Drain Current Measured Harmonic Bipolar Transistor
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