Silicon bipolar transistor models for distortion analysis
In this chapter the most important nonlinearities in a bipolar transistor are discussed. The transistor is assumed to work in the forward active region. The model that will be followed in this chapter is the Gummel-Poon model [Getr 76]. This model is used now already for several decades. More recent models such as the VBIC95 model [Mc And 95] are still based upon this model. The region of quasi-saturation [Anto 88] is not considered here. This region is especially of interest for power transistors. Distortion caused by quasi-saturation in power applications is discussed in [DeVr 96].
KeywordsCollector Current Power Model Nonlinearity Coefficient Bipolar Transistor Base Current
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