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Aspects of Silicon Epitaxy

  • J. Nishizawa

Abstract

The vapor epitaxy of silicon is a process of considerable technological importance and as such has been the subject of much research (some of this was reviewed in the contribution to Volume 1 of this series by D. W. Shaw of Texas Instruments). However, several basic problems have still not been fully investigated and the present text outlines work carried out on some of these at Sendai in the groups at the Research Institute of Electrical Communication and at the Semiconductor Research Institute. Some of this has appeared in a variety of separate papers; the aim here has been to draw the varied threads together in the hope of presenting a more coherent interpretation of the way in which silicon epitaxy can be controlled. Most of our work has been concerned with processes based on chlorosilanes, and we have particularly investigated factors controlling growth rate, crystal perfection, and purity. The techniques developed in the course of this work could have important implications for device technology, a point illustrated by a description of their application in the development of a new solid state device, the static induction transistor, which is the solid state equivalent of the vacuum triode. The latter, while already of importance for power devices, also shows promise for integrated circuits, in which it already has shown operation powers of less than 0.1 nW and with an energy of 0.002 pJ per gate. The highest speed for operation obtained with the simplest processing, consisting of two diffusion times after one epitaxy and followed by making contact holes, is 3.7 nsec. There is obviously the promise of subnanosecond operation with improved structure, but with more complicated processing.

Keywords

Epitaxial Layer Electrochemical Society Neutral Plane Solid State Device Grown Layer 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media New York 1978

Authors and Affiliations

  • J. Nishizawa
    • 1
    • 2
  1. 1.Research Institute of Electrical CommunicationTohoku UniversitySendaiJapan
  2. 2.Semiconductor Research InstituteSendaiJapan

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