Abstract
Classical reactor design requires the application of the principles of heat, mass, and momentum transfer for the efficient conversion of reactants to products. We will treat this subject with a narrower focus: thin films with desired properties from gaseous sources. Such a discussion may be insufficient for the design of a commercial reactor from first principles. However, for the modification of an existing reactor for the purpose of tailoring film properties or for the construction of laboratory prototypes, this discussion will be adequate.
Keywords
Chemical Vapor Deposition Knudsen Number Reactor Design Residence Time Distribution Fluid Element
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
Preview
Unable to display preview. Download preview PDF.
References
- 1.M. L. Hammond, Solid State Technol. 21 (11), 69 (1978).Google Scholar
- 2.S. Dushman and J. M. Lafferty, Scientific Foundations of Vacuum Technique, John Wiley, New York, 1962Google Scholar
- G. N. Patterson, Introduction to Kinetic Theory of Gas Flows, University of Toronto Press, Toronto, 1971.Google Scholar
- 3.J. B. Hudson, private communication.Google Scholar
- 4.A. Sherman, Chemical Vapor Deposition for Microelectronics, p. 16, Noyes, Park Ridge, N.J., 1987Google Scholar
- 5.J. M. Smith, Chemical Engineering Kinetics, p. 104, McGraw-Hill, New York, 1981.Google Scholar
- 6.O. Livenspiel, Chemical Reaction Engineering, John Wiley, New York, 1982.Google Scholar
- 7.A. S. Inamdar, and C. M. McConica, in Tungsten and Other Refractory Metals for VLSI/ULSI Applications V(Wong and Furukawa Eds.), p. 93, Materials Research Society, Pittsburgh, 1990.Google Scholar
- 8.G. P. Raupp, in Tungsten and Other Refractory Metals for VLSI Applications III, (Wells Ed.), p. 15, Materials Research Society, Pittsburgh, 1988.Google Scholar
- 9.J. Bloem, and L. J. Giling, Current Topics in Materials Science 1, 147 (1978).Google Scholar
- 10.A. Sherman, J. Electrochem. Soc. 137 (6), 1892 (1990).CrossRefGoogle Scholar
- 11.M. E. Coltrin, R. J. Kee, and J. A. Miller, J. Electrochem. Soc. 131, 425 (1984).CrossRefGoogle Scholar
- 12.K. Jensen, and W. Kern, in Thin Films Processes II (Vossen and Kern, eds.), p. 284, Academic Press, New York, 1991.Google Scholar
- 13.Watkins Johnson Ltd., private communications.Google Scholar
- 14.L. Bartholomew, and J. Sisson, XXX, in Proc. 3rd Ann. Dielectrics and Metallization Symp., J. C. Schumacher, San Diego, Calif. 1981.Google Scholar
- 15.E. A. Matsuzak, C. M. Hill, and D. V. Horak, SPIE Proc. 1188 (1989).Google Scholar
- 16.Applied Materials Ltd., private communications.Google Scholar
- 17.T. E. Clark, and A. P. Constant, Microelectronic Manuf. and Testing May/June, 8 (1990).Google Scholar
Copyright information
© Springer Science+Business Media New York 1995