Advances in Nonradiative Processes in Semiconductors

  • R. G. Ulbrich
Part of the NATO ASI Series book series (NSSB, volume 249)


The concepts of elementary excitations, electronic band-structure, and scattering mechanisms of electrons and holes in semiconductors are reviewed at an elementary level. Several aspects of the relaxation process of nonequilibrium charge carriers in the direct gap semiconductor gallium arsenide are discussed: electron-electron and electron-phonon coupling rates, and their competition with radiative interband transitions are summarized. Two specific experiments are discussed in detail: “hot electron” luminescence under conditions of cw excitation above the band gap and nonlinear, transient “pump-probe” optical spectra excited with ultrashort (70 fs) laser pulses.


Acoustic Phonon Elementary Excitation Nonequilibrium Charge Carrier Intervalley Scattering Envelope Wave Function 
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Copyright information

© Springer Science+Business Media New York 1991

Authors and Affiliations

  • R. G. Ulbrich
    • 1
  1. 1.4. Physikalisches InstitutUniversität GöttingenGöttingenFed. Rep. Germany

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