High Speed Resist Exposure With a Single Tip
We have shown that current-controlled scanning probe lithography (SPL) can reliably pattern nanometer-scale features in resist. However, the serial nature of SPL makes it much slower than mask-based techniques such as photolithography, x-ray lithography, or extreme ultraviolet lithography. An advantage of a direct write approach is that it does not require expensive and time-consuming mask fabrication. SPL may also have superior alignment capabilities. Nevertheless, in order for SPL to become a viable technology for high-resolution semiconductor lithography, the throughput must be dramatically increased.
KeywordsEtch Rate Voltage Ramp Current Feedback Capacitance Compensation Compensation Circuit
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