Abstract
The current-controlled scanning probe lithography (SPL) systems that we developed (described in Chapter 3) can reliably pattern uniform features in organic resists with dimensions below 100 nm. In this chapter, we compare electron exposures made by SPL to those made by electron beam lithography (EBL). This comparison highlights the advantages and limitations of a low-energy electron lithography technique such as SPL.
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Soh, H.T., Guarini, K.W., Quate, C.F. (2001). SPL Linewidth Control. In: Scanning Probe Lithography. Microsystems, vol 7. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-3331-0_4
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DOI: https://doi.org/10.1007/978-1-4757-3331-0_4
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