Resist Exposure Using Field-Emitted Electrons
Early scanning probe lithography (SPL) studies were limited to demonstrations of the technique’s fine resolution. A few groups fabricated devices using SPL , but such work was directed toward creating a single working device suitable for research or exploration. Methods used by these groups suffer from speed constraints and poor repeatability, thus it is unlikely they can be easily extended to large-scale fabrication applications. We sought to develop a method of SPL suited to semiconductor lithography, where accuracy, reliability, and throughput are essential.
KeywordsScanning Tunneling Microscope Exposure Dose Emission Current Full Width Half Maximum Current Density Distribution
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