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SOI MOSFETs

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Device and Circuit Cryogenic Operation for Low Temperature Electronics

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Abstract

The SOI CMOS is shown in Fig. 1. A buried insulator, which is typically an oxide layer, is fabricated in the silicon substrate using various methods (see next paragraph).

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Authors and Affiliations

  1. Laboratoire de Physique des Composants à Semiconducteurs, UMR CNRS, ENSERG/INPG, 23 rue des Martyrs, BP 257, 38016, Grenoble, France

    Francis Balestra & Gérard Ghibaudo

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  1. Francis Balestra
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  2. Gérard Ghibaudo
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  1. UMR CNRS/INPG, Grenoble, France

    Francis Balestra  & Gérard Ghibaudo  & 

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Balestra, F., Ghibaudo, G. (2001). SOI MOSFETs. In: Balestra, F., Ghibaudo, G. (eds) Device and Circuit Cryogenic Operation for Low Temperature Electronics. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-3318-1_3

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  • DOI: https://doi.org/10.1007/978-1-4757-3318-1_3

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4419-4898-4

  • Online ISBN: 978-1-4757-3318-1

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