RF CMOS Modelling

  • L. F. Tiemeijer
  • L. M. F. de Maaijer
  • R. van Langevelde
  • A. J. Scholten
  • D. B. M. Klaassen


RF application of CMOS requires accurate modelling of transistor properties, such as impedance levels, power gain, noise, distortion, substrate parasitics and nonquasi-static effects. Apart from noise, until now relative little attention has been paid to these properties in compact models for circuit simulation. Here clear experimental results will be used to illustrate the accuracy and limitations of state-of-the-art compact models. Wherever possible, improvements or macro models that can be used for circuit simulation will be presented.


Noise Figure Power Gain Circuit Simulation Substrate Resistance Distortion Analysis 
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Copyright information

© Springer Science+Business Media Dordrecht 1999

Authors and Affiliations

  • L. F. Tiemeijer
    • 1
  • L. M. F. de Maaijer
    • 1
  • R. van Langevelde
    • 1
  • A. J. Scholten
    • 1
  • D. B. M. Klaassen
    • 1
  1. 1.Philips Research LaboratoriesEindhovenThe Netherlands

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