RF CMOS Modelling

  • L. F. Tiemeijer
  • L. M. F. de Maaijer
  • R. van Langevelde
  • A. J. Scholten
  • D. B. M. Klaassen

Abstract

RF application of CMOS requires accurate modelling of transistor properties, such as impedance levels, power gain, noise, distortion, substrate parasitics and nonquasi-static effects. Apart from noise, until now relative little attention has been paid to these properties in compact models for circuit simulation. Here clear experimental results will be used to illustrate the accuracy and limitations of state-of-the-art compact models. Wherever possible, improvements or macro models that can be used for circuit simulation will be presented.

Keywords

Noise Figure Power Gain Circuit Simulation Substrate Resistance Distortion Analysis 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media Dordrecht 1999

Authors and Affiliations

  • L. F. Tiemeijer
    • 1
  • L. M. F. de Maaijer
    • 1
  • R. van Langevelde
    • 1
  • A. J. Scholten
    • 1
  • D. B. M. Klaassen
    • 1
  1. 1.Philips Research LaboratoriesEindhovenThe Netherlands

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