Microwave Noise Modeling of CMOS Transistors

  • Tajinder Manku


In this paper we systematically develop an understanding of the noise behavior within MOS devices operating at microwave frequencies. A bottom to top approach is taken to accomplish this — device physics to network modeling to device layout. Our hope is that the results within this paper will provide RF CMOS circuit designers with a better understanding of the noise properties of MOS devices as well as to help them design better low noise amplifiers and mixers.


Solid State Circuit Current Gain Channel Device Optimum Noise Finger Width 
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Copyright information

© Springer Science+Business Media Dordrecht 1999

Authors and Affiliations

  • Tajinder Manku
    • 1
  1. 1.RF Technology GroupUniversity of WaterlooWaterlooCanada

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