Abstract
Shrinking device dimensions and ever higher working frequencies are creating a strong demand for sophisticated models and characterisation methods. New S-parameters de-embedding strategies allow a finer analysis of the measurement results and a more detailled device modelling.
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Gillon, R., Vanhoenacker, D., Colinge, JP. (1999). RF Modelling and characterisation of SOI and bulk MOSFET’s. In: Sansen, W., Huijsing, J., van de Plassche, R. (eds) Analog Circuit Design. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-3047-0_10
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