Abstract
Shrinking device dimensions and ever higher working frequencies are creating a strong demand for sophisticated models and characterisation methods. New S-parameters de-embedding strategies allow a finer analysis of the measurement results and a more detailled device modelling.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
P. J. van Wijnen, H. R. Claessen, and E. A. Wolsheimer, “A new straightforward calibration and correction procedure for on-wafer high frequency S-parameters measurements (45 MHz–18 GHz),” in IEEE 1987 Bipolar Circuits and Technology Meeting, 1987.
A. Fraser, R. Gleason, and E. W. Strid, “GHz on-silicon-wafer probing calibration methods,” in IEEE 1988 Bipolar Circuits and Technology Meeting, 1988.
H. Cho and D. Burk, “A three-step method for the de-embedding of high-frequency s-parameters measurements,” IEEE Trans. on Electron Devices, vol. 38, pp. 1371–1375, June 1991.
C.-H. Kim, C. S. Kim, H. K. Yu, and K. S. Nam, “An isolated-open pattern to de-embed pad parasitics,” IEEE Microwave and Guided Waves Letters, vol. 8, pp. 96–98, Feb. 1998.
D. F. Williams and R. B. Marks, “Reciprocity relations in waveguide junctions,” IEEE Microwave and Guided Waves Letters, vol. 41, pp. 1105–1110, June 1993.
H. Heuermann and B. Schiek, “Robust algorithms for txx network analyzer self-calibration procedures,” IEEE Trans. on Instrumentation and Measurement, vol. 43, pp. 18–22, Feb. 1994.
R. B. Marks and D. F. Williams, “A general waveguide circuit theory,” J. Res. of the Natl Inst. Stand. and Technol., vol. 97, pp. 533–562, Sep-Oct 1992.
H. Heuermann and B. Schiek, “Procedures for the determination of the scattering parameters for network analyzer calibration,” IEEE Trans. on Instrumentation and Measurement, vol. 42, pp. 528–531, Apr. 1993.
R. Gillon, J.-P. Raskin, D. Vanhoenacker, and J.-P. Colinge, “Modelling and optimizing the soi mosfet in view of mmic applications,” in 25th European Microwave Conference Digest, (Bologna, Italy), pp. 543–547, Sep. 4–7 1995.
D. F. Williams, R. B. Marks, and A. Davidson, “Comparison of on-wafer calibrations,” in 38th ARFTG Conference Digest, pp. 68–81, Dec. 1991.
J.-P. Raskin, R. Gillon, J. Chen, D. Vanhoenacker, and J.-P. Colinge, “Accurate SOI MOSFET characterization at microwave frequencies for device performance optimisation and analogue modelling,” IEEE Trans. on Electron Devices, May 1998.
J.-P. Raskin, A. Viviani, D. Flandre, and J.-P. Colinge, “Substrate crosstalk reduction using SOI technology,” IEEE Trans. on Electron Devices, vol. 44, pp. 2252–2261, Dec. 1997.
M. Bagheri and Y. Tsividis, “A small-signal dc-to-highfrequency nonquasistatic model for the four terminal MOSFET valid in all regions of operation,” IEEE Trans. on Electron Devices, vol. 32, pp. 2383–2391, nov 1985.
H.-J. Park, R K. Ko, and C. Hu, “A charge conserving nonquasistatic MOSFET model for SPICE transient analysis,” IEEE Trans. on Computer Aided Design, vol. 10, pp. 629–642, may 1991.
R. Gillon, J.-R Raskin, D. Vanhoenacker, J.-R Colinge, and G. Dambrine, “Characterisation of soi mosfets at microwave frequencies,” in Proceedings of the 8th Int. Symp. on SOI Technology and Devices (S. Cristoloveanu, ed.), vol. 97–23, (Paris), pp. 149–154, Electrochemical Society, Inc., Aug. 31- Sep. 5 1997.
R. Gillon, Modelling and Characterisation of the SOI MOSFET for MMIC applications. PhD thesis, Université catholique de Louvain, Louvain-la-Neuve, june 1998. <ftp://anonymous@ftp.emic.ucl.ac.be/Pub/Incoming/RGPublic/Thesis>.
E. Dubois and E. Robilliart, “Efficient non-quasi-static MOSFET’s model for circuit simulation,” in Proceedings of the IEDM ‘85, pp. 945–948, 1995.
B. Irriguez, L. F. Ferreira, B. Gentinne, and D. Flandre, “A physically-based C∞-continuous fully-depleted SOI MOSFET model for analog applications,” IEEE Trans. on Electron Devices, vol. 43, pp. 568–575, Apr. 1996.
C. C. McAndrew, B. K. Bhattacharya, and O. Wing, “A single-piece C∞-continuous MOSFET model including subthreshold conduction,” IEEE Trans. on Electron Devices, vol. 12, pp. 565–567, Oct. 1991.
M. Chan, K. Hui, and P. K. K., “A robust and physical BSIM3 non-quasistatic transient and AC small-signal model for circuit simulation,” IEEE Trans. on Electron Devices, vol. 45, pp. 834–841, 4, 1998.
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1999 Springer Science+Business Media Dordrecht
About this chapter
Cite this chapter
Gillon, R., Vanhoenacker, D., Colinge, JP. (1999). RF Modelling and characterisation of SOI and bulk MOSFET’s. In: Sansen, W., Huijsing, J., van de Plassche, R. (eds) Analog Circuit Design. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-3047-0_10
Download citation
DOI: https://doi.org/10.1007/978-1-4757-3047-0_10
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4419-5101-4
Online ISBN: 978-1-4757-3047-0
eBook Packages: Springer Book Archive