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Integrated Passive Elements and Their Usage at High Frequencies

  • Yannis E. Papananos
Chapter

Abstract

For the design of integrated circuits in the radio frequency band, equally important to active elements (transistors) are also the passive ones (inductors, capacitors, resistors). For example, the existence of high quality capacitors and inductors significantly determines the circuit performance and usually their shortage in an IC technology prevents the design of high frequency systems. Capacitors and ohmic resistors are elements that can be easily fabricated in analog silicon technologies. Recently, the fabrication of capacitors has been extended to digital (CMOS) technologies [1,2] due to their low cost and high level of integration they exhibit. Integrated inductors had not been fabricated within silicon processes until recently [3,4]. The main reason was the lack of a satisfactory model of the electrical and magnetic performance of the element. Recently, (1997) a complete model for integrated inductors over silicon substrates, along with a CAD tool, have been presented [5,6]. This effort will significantly boost the usage of inductors in silicon integrated circuits, something that has been very common and for many years in GaAs technologies.

Keywords

Quality Factor Mutual Inductance Parasitic Capacitance Bonding Wire Silicon Technology 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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Bibliography

  1. [1]
    Q. Huang, “A MOSFET-Only Continuous-Time Bandpass Filter,” IEEE J. of Solid-State Circuits, vol. 32, no. 2, pp. 147–158, Feb. 1997.CrossRefGoogle Scholar
  2. [2]
    S. Bantas and Y. Papananos, “A W-power Continuous-Time Current-Mode Filter in a Digital CMOS Process,” in Proc. IEEE 5th Int. Conference on VLSI and CAD, Seoul–Korea, 1997, pp. 346–348.Google Scholar
  3. [3]
    S. Pipilos, Y. Tsividis, J. Fenk, and Y. Papananos, “A Si 1.8 GHz RLC Filter with Tunable Center Frequency and Quality Factor,” IEEE J. of Solid-State Circuits, vol. 31, no. 10, pp. 1517–1525, Oct. 1996.CrossRefGoogle Scholar
  4. [4]
    J.R. Long and M.A. Copeland, “The Modeling, Characterization, and Design of Monolithic Inductors for Silicon RF ICs,” IEEE J. of Solid-State Circuits, vol. 32, no. 3, pp. 357–369, Mar. 1997.CrossRefGoogle Scholar
  5. [5]
    Y. Koutsoyannopoulos, Y. Papananos, C. Alemanni, and S. Bantas, “A Generic CAD Model for Arbitrarily Shaped and Multi-Layer Integrated Inductors on Silicon Substrates,” in Proc. ESSCIRC 97, Southampton UK, Sep. 1997, pp. 320–323.Google Scholar
  6. [6]
    Y. Koutsoyannopoulos and Y. Papananos, “A CAD Tool for Simulating the Performance of Polygonal and Multi-Layer Integrated Inductors on Silicon Substrates,” in iv Proc. IEEE 5th Int. Conference on VLSI and CAD, Seoul–Korea, 1997, pp. 244–246.Google Scholar
  7. [7]
    A.M Niknejad and R.G. Meyer, “Analysis and Optimization of Monolithic Inductors and Transformers for RF ICs,” IEEE CICC 1997, pp. 375–378.Google Scholar
  8. [8]
    H.M. Greenhouse, “Design of Planar Rectangular Microelectronic Inductors,” IEEE Trans. on Parts, Hybrids and Packaging, vol. PHP-10, no. 2, pp. 101–109, June 1974.CrossRefGoogle Scholar
  9. [9]
    F.W. Grover, Inductance Calculations, Van Nostrand Princeton N.J. 1946, Dover Publications, 1962.Google Scholar
  10. [10]
    R. Garg and I.L. Bahl, “Characteristics of Coupled Mictostriplines,” IEEE Trans. on Microivavc Theory and Technics, vol. MTT-27, pp. 700705, July 1979.Google Scholar
  11. [11]
    H. Hasagawa, M. Furukawa, and H. Yanai, “Properties of Microstrip Line on Si — Si02 System,” IEEE Trans. on MTT, vol. 19, pp. 869–881, Nov. 1971.CrossRefGoogle Scholar
  12. [12]
    H.A. Wheeler, “Transmission-Line Properties of a Strip on a Dielectric Sheet on a Plane,” IEEE Trans. on MTT, vol. 25, pp. 631–647, Aug. 1977.CrossRefGoogle Scholar
  13. [13]
    E. Pettenpaul et al., “CAD Models of Lumped Elements on GaAs up to 18 GHz,” IEEE Trans. on MTT, vol. 36, pp. 294–304, Feb. 1988.CrossRefGoogle Scholar
  14. [14]
    J.N. Burghartz, D.C. Edalstein, K.A. Jenkins, and Y.H. K.ark, “Spiral Inductors and Transmission Lines in Silicon Technology Using Copper-Damascene Interconnects and Low-Loss Substrates,” IEEE Trans. on MTT, vol. 45, no. 10, pp. 1961–1968, Oct. 1997.Google Scholar
  15. [15]
    S.M. Sze, Physics of Semiconductor Devices, John Wiley & Sons, 1981.Google Scholar
  16. [16]
    M. Soyuer and R.G. Meyer, “High-Frequency Phase-Locked Loops in Monolithic Bipdar Technology,” IEEE J. of Solid-State Circuits, vol. SC-24, pp. 787–795, June 1989.Google Scholar
  17. [17]
    B. Razavi, “Challenges in the Design of Frequency Synthesizers for Wireless Applications,” IEEE 1997 CICC,pp. 395–402.Google Scholar
  18. [18]
    D.J. Young and B.E. Boser, “A Micromachine-Based RF Low-Noise Voltage-Controlled Oscillator,” IEEE 1997 CICC,pp. 431–434.Google Scholar
  19. [19]
    J.L. McCreary, “Matching Properties and Voltage and Temperature Dependence of MOS Capacitors,” IEEE J. of Solid-State Circuits, vol. SC-16, no. 6, pp. 608–616, Dec. 1981.CrossRefGoogle Scholar
  20. [20]
    J.N. Burghartz, M. Soyuer, and K.A. Jenkins, “Microwave Inductors and Capacitors in Standard Multilevel Silicon Technology,” IEEE Trans. MTT, vol. 44, no. 1, pp. 100–104, Jan. 1996.CrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media New York 1999

Authors and Affiliations

  • Yannis E. Papananos
    • 1
  1. 1.National Technical University of AthensAthensGreece

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