The MOS Transistor at High Frequencies

  • Yannis E. Papananos


Modern designs of telecommunications transceivers employ different technologies (GaAs, BiCMOS/bipolar, CMOS) depending on the frequency of operation of each stage. Evidently, this practice dramatically increases the system cost but it is a one way solution in many cases. However, at the low end of the frequency band (800 to 2400 MHz), it is now feasible to implement the complete system using Si-based technologies. This fact, drastically reduces the manufacturing cost and increases the integration level — a very desirable feature especially in mobile communication systems. Further cost reductions are possible if it becomes feasible to design and implement the complete transceiver in a pure CMOS technology which is the less costly solution and simultaneously, exhibits the highest level of integration. This solution is investigated in research projects from the Academia but the Industry still remains reluctant in adopting it mainly due to the fact that the MOS transistor exhibits poorer performance than its bipolar counterpart, especially at high frequencies of operation.


Drain Current CMOS Technology nMOS Transistor pMOS Transistor Strong Inversion 
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Copyright information

© Springer Science+Business Media New York 1999

Authors and Affiliations

  • Yannis E. Papananos
    • 1
  1. 1.National Technical University of AthensAthensGreece

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